ECE 4570 - Silicon Device Fundamentals

Spring. 4 credits.

Prerequisite: ECE 3150 and ECE 3030 or MSE 2620 or AEP 4500.

Staff.

Teaches fundamental principles on semiconductor carrier statistics, band diagrams, pn-junction diodes, heterojunctions, Schottky diodes, BJT, MOS capacitor and MOSFET. Emphasis is put on the MOSFET designs for advanced VLSI technology from its physical structure, accurate modeling, manufacturability and applications. Device designs include short channel effects, gatestack alternatives, band engineering, and strain engineering. By using computer simulation and experimental data, the course culminates in a design project dealing with technical concerns in current VLSI industry. The goal for this course is to train circuit, device, and process engineers for semiconductor technology research and development.

Outcome 1: Obtain a basic understanding of semiconductor device operation.

Outcome 2: Learn the operation of semiconductor test equipment including on wafer probing techniques. Carry out basic automated measurement sequences.

Outcome 3: Apply device fundamentals to effectively predict the measured behavior of the device under test.

Outcome 4: Develop comprehensive experimental and analytical skills leading to effective communication of results.